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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10892224 B1

PDFFull Text
Date of Patent:
Jan. 12, 2021

Filed:

Feb. 26, 2018

Apparatuses comprising protective material along surfaces of tungsten-containing structures

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Luca Fumagalli, Boise, ID (US);

Davide Colombo, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/28556 (2013.01); H01L 21/76834 (2013.01); H01L 21/76852 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 27/108 (2013.01); H01L 27/10805 (2013.01); H01L 27/10885 (2013.01);
Abstract

Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

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