The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Sep. 04, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Erfeng Ding, Clifton Park, NY (US);

Guoxiang Ning, Clifton Park, NY (US);

Meixiong Zhao, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, unknown;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 27/085 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/085 (2013.01);
Abstract

One illustrative IC product disclosed herein includes a first conductive line positioned at a first level within the IC product and a first conductive structure positioned at a second level within the IC product, wherein the second level is lower than the first level. In this illustrative example, the IC product also includes a second conductive structure that is conductively coupled to the first conductive line, wherein at least a portion of the second conductive structure is positioned at a level that is above the first level and wherein nearest surfaces of the first conductive structure and the second conductive structure are laterally offset from one another by a lateral distance and insulating material positioned between the nearest surfaces of the first conductive structure and the second conductive structure.


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