The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Oct. 12, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Ben-Li Sheu, Sunnyvale, CA (US);
Feng Q. Liu, San Jose, CA (US);
Tae Hong Ha, San Jose, CA (US);
Mei Chang, Saratoga, CA (US);
Shirish Pethe, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 14/34 (2006.01); C23C 16/04 (2006.01); C23C 14/04 (2006.01); C23C 14/02 (2006.01); C23C 16/18 (2006.01); C23C 14/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); C23C 14/025 (2013.01); C23C 14/046 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01); C23C 16/045 (2013.01); C23C 16/18 (2013.01); C23C 16/34 (2013.01); C23C 16/4411 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45553 (2013.01);
Abstract
Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.