The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Oct. 24, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Biao Liu, San Jose, CA (US);
Cheng Pan, San Jose, CA (US);
Erica Chen, Cupertino, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
Chang Ke, Sunnyvale, CA (US);
Lei Zhou, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.