The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Feb. 13, 2019
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Kuang-Hao Chiang, Taoyuan, TW;
Yu-Hsuan Lin, Taichung, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); G11C 13/0097 (2013.01); H01L 27/24 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract
A method for controlling accumulated resistance property of a ReRAM device, wherein the method includes steps as follows: A first programing pulse set is firstly applied to a ReRAM device for acquiring a reference accumulated resistance distribution. A second programing pulse set is then provided according to the reference accumulated resistance distribution, and the second programing pulse set is applied to the ReRAM device, to make the ReRAM device having a predetermined accumulated resistance distribution.