The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Dec. 28, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Byeong-hwan Jeon, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/55 (2014.01);
U.S. Cl.
CPC ...
G01N 21/55 (2013.01); G01N 2201/061 (2013.01); G01N 2201/068 (2013.01); G01N 2201/105 (2013.01);
Abstract

Provided are a method and an apparatus for inspecting an extreme ultraviolet (EUV) mask at a high speed with high optical efficiency, and a method of manufacturing the EUV mask, wherein the method of inspecting the EUV mask is included in the method of manufacturing the EUV mask. The apparatus for inspecting the EUV mask includes a light source configured to generate and output light, a linear zone plate configured to convert the light from the light source to light having a linear form, a slit plate configured to output the light having the linear form by removing a higher-order diffracted light component from the light having the linear form, a stage on which the EUV mask is located, and a detector configured to detect the light reflected from the EUV mask, in response to the light being irradiated onto and reflected from the EUV mask.


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