The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Aug. 03, 2016
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Satoru Mori, Naka, JP;
U Tani, Osaka, JP;
Yuuji Sato, Iwaki, JP;
Fumitake Kikuchi, Naka, JP;
Isao Arai, Naka, JP;
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C25C 1/12 (2006.01); C25C 7/02 (2006.01); C22F 1/08 (2006.01); C22C 9/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C22C 9/00 (2013.01); C22F 1/08 (2013.01); C25C 1/12 (2013.01); C25C 7/02 (2013.01);
Abstract
A high purity copper sputtering target material includes Cu at a purity of 99.99998 mass % or more excluding O, H, N and C, wherein an Al content is 0.005 mass ppm or less, a Si content is 0.05 mass ppm or less, an Fe content is 0.02 mass ppm or less, a S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, n O content is 1 mass ppm or less, H content is 1 mass ppm or less, a N content is 1 mass ppm or less, and a C content is 1 mass ppm or less.