The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Oct. 03, 2018
International Business Machines Corporation, Armonk, NY (US);
Ulvac, Inc., Susono, JP;
Matthew J. BrightSky, Pound Ridge, NY (US);
Robert Bruce, White Plains, NY (US);
Takeshi Masuda, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A metal liner is deposited conformally to a pore within a first dielectric material of a semiconductor device. The pore extends through the first dielectric material to a top surface of a first metal electrode. The metal liner is etched such that the metal liner only substantially remains on sidewalls of the pore. A phase change material is selectively deposited within the pore of the first dielectric layer to substantially fill the pore with the phase change material. The selective deposition of the phase change material produces a growth rate of phase change material on the metal liner at a substantially greater rate than a growth rate of the phase change material on exposed surfaces of the first dielectric material.