The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

May. 22, 2020
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Kerry Joseph Nagel, Scottsdale, AZ (US);

Sanjeev Aggarwal, Scottsdale, AZ (US);

Sarin A. Deshpande, San Jose, CA (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction. The first set of exposed areas and the second set of exposed areas may have multiple areas that overlap. The method may also include, (c) after the etching in (a) and (b), etching through at least a portion of the thickness of the magnetoresistive stack through the first set and second set of exposed areas.


Find Patent Forward Citations

Loading…