The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jul. 30, 2019
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Yukiyasu Nakao, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a largest area of the transverse plane among a plurality of p-type well layers provided in an n-type drift layer and is arranged on an outermost periphery below and horizontally overlapping a gate electrode pad. It is preferable that a concentration of an impurity contained in the p-type semiconductor layer be larger than that of the p-type well layer.