Silicon carbide semiconductor device

Abstract

A silicon carbide semiconductor device, including a semiconductor substrate having first and second epitaxial layers. The second epitaxial layer is formed on a first main surface of the semiconductor substrate, and includes first and second semiconductor regions, selectively provided in a surface layer of the second epitaxial layer respectively in the active region and the border region, and a third semiconductor region. The semiconductor device further includes a trench penetrating the first and third semiconductor regions to reach the first epitaxial layer, a gate electrode provided in the trench via a gate insulating film, a first electrode electrically connected to the first and third semiconductor regions, and a second electrode provided at a second main surface of the semiconductor substrate. The second semiconductor region is separate from the first semiconductor region. A portion of the third semiconductor region is exposed at the first main surface of the semiconductor substrate, between the first and second semiconductor regions.