The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jan. 07, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Samuele Sciarrillo, Lomagna, IT;
Marcello Ravasio, Olgiate Molgora, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2427 (2013.01); H01L 27/224 (2013.01); H01L 27/226 (2013.01); H01L 27/228 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2445 (2013.01); H01L 27/2463 (2013.01); H01L 27/2481 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/148 (2013.01); H01L 45/1675 (2013.01);
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.