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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10886288 B1

PDFFull Text
Date of Patent:
Jan. 05, 2021

Filed:

Jun. 27, 2019

Vertical semiconductor memory device structures including vertical channel structures and vertical dummy structures

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hongsoo Kim, Seongnam-si, KR;

Hyunmog Park, Seoul, KR;

Joongshik Shin, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 27/11551 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 27/06 (2006.01); H01L 27/11578 (2017.01); H01L 21/822 (2006.01); H01L 27/11563 (2017.01); H01L 27/11568 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 27/11521 (2017.01); H01L 27/11556 (2017.01); H01L 27/11514 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11551 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11514 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 27/11563 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11575 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/66666 (2013.01); H01L 29/7926 (2013.01);
Abstract

A vertical memory device structure can include a vertical channel structure that vertically penetrates through an upper structure and a lower structure of a stack structure in a cell array region of the device. The vertical channel structure can have a side wall with a stepped profile at a level in the vertical channel structure where the upper structure meets the lower structure. A vertical dummy structure can vertically penetrate through a staircase structure that is defined by the upper structure and the lower structure in a connection region of the device, and the vertical dummy structure can have a side wall with a planar profile at the level where the upper structure meets the lower structure.

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