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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10886172 B1

PDFFull Text
Date of Patent:
Jan. 05, 2021

Filed:

Apr. 14, 2020

Methods for wordline separation in 3d-nand devices

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yihong Chen, San Jose, CA (US);

Ziqing Duan, San Jose, CA (US);

Abhijit Basu Mallick, Palo Alto, CA (US);

Kelvin Chan, San Ramon, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 21/28568 (2013.01); H01L 21/31122 (2013.01); H01L 21/32135 (2013.01); H01L 21/76843 (2013.01); H01L 21/76888 (2013.01); H01L 23/528 (2013.01); H01L 23/53266 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

Find Patent Forward Citations

Chen, Yihong. (2021). Methods for wordline separation in 3d-nand devices (U.S. Patent No. 10886172). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10886172

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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