The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Jan. 25, 2016
Applicant:
Dexerials Corporation, Tokyo, JP;
Inventors:
Assignee:
Dexerials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/08 (2006.01); C04B 35/645 (2006.01); C04B 35/495 (2006.01); C04B 35/453 (2006.01); C04B 35/01 (2006.01); G11B 7/243 (2013.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); C04B 35/016 (2013.01); C04B 35/453 (2013.01); C04B 35/495 (2013.01); C04B 35/645 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); G11B 7/243 (2013.01); H01J 37/3491 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3262 (2013.01); C04B 2235/3263 (2013.01); C04B 2235/3268 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3287 (2013.01); C04B 2235/3289 (2013.01); C04B 2235/3291 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/404 (2013.01); C04B 2235/42 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/80 (2013.01);
Abstract
Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio P/Pof a maximum peak intensity Pof a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity Pof a peak due to W is 0.027 or less.