The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Oct. 24, 2019
Applicant:
Coventor, Inc., Cary, NC (US);
Inventors:
Daniel Sobieski, Hillsboro, OR (US);
Rich Wise, Los Gatos, CA (US);
Yang Pan, Fremont, CA (US);
David M. Fried, South Salem, NY (US);
Jiangjiang Gu, San Carlos, CA (US);
Assignee:
Coventor, Inc., Cary, NC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/367 (2020.01); G06T 17/10 (2006.01); G03F 7/004 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G06F 30/20 (2020.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/367 (2020.01); G03F 7/0002 (2013.01); G03F 7/0041 (2013.01); G06T 17/10 (2013.01); G03F 7/705 (2013.01); G06F 30/20 (2020.01); G06F 2119/18 (2020.01); Y02P 90/02 (2015.11);
Abstract
A virtual fabrication environment for semiconductor device fabrication that determines a lowest lithography exposure dose range in which one or more defects are still reparable by deposition and etch operations is discussed. Further techniques for repairing line edge roughness caused by lithography are described.