The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Dec. 13, 2018
Applicant:

National Chung-shan Institute of Science and Technology, Taoyuan, TW;

Inventors:

Po-Han Lee, Taipei, TW;

Biing-Jyh Weng, New Taipei, TW;

Chuen-Ming Gee, Taoyuan, TW;

Bo-Wen Chen, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/66 (2006.01); H01M 4/02 (2006.01); H01M 4/04 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); H01M 4/663 (2013.01); H01M 4/0471 (2013.01); H01M 2004/021 (2013.01);
Abstract

The present invention provides an anode material of nano-silicon. The anode material has multilayer-graphene as a carrier and is coated with silicon suboxide and with an amorphous carbon layer. The anode material has multilayer-graphene to serve as a carrier, nano-silicon which is adsorbed on the multilayer-graphene and both the multilayer-graphene and the nano-silicon serve as a core, silicon suboxide and the amorphous carbon layer to cover the multilayer-graphene and the nano-silicon, and a plurality of buffering holes which are disposed on the anode material to provide buffering space. An anode material of high quality is realized by coating multilayer-graphene which serves as a carrier of nano-silicon with silicon suboxide and with the amorphous carbon layer.


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