The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Oct. 08, 2019
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventor:

Jian Qiang Hu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2017.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/11531 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02274 (2013.01); H01L 21/76202 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/115 (2013.01); H01L 29/66795 (2013.01); H01L 29/7854 (2013.01); H01L 27/11531 (2013.01); H01L 27/11573 (2013.01);
Abstract

Semiconductor structures are provided. An exemplary semiconductor structure includes a semiconductor substrate having a first region and a second region and a plurality of first fins on the semiconductor substrate in the first region and a plurality of second fins on the semiconductor substrate in the second region. A first oxide layer is on side surfaces of the plurality of first fins; and a second oxide layer is on side surfaces of the second fins. A corner between a top surface and a side surface of each first fin is a first rounded corner. A corner between a top surface and a side surface of each second fin is a second rounded corner. A radius of curvature of the first rounded corner is different from a radius of curvature of the second corner.


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