The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Feb. 22, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Ming-Fang Lai, Hsinchu, TW;

Ming-Cheng Lin, Yilan County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/778 (2006.01); H01H 9/04 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0285 (2013.01); H01L 29/7787 (2013.01); H02H 9/046 (2013.01);
Abstract

A circuit including a discharging device, a resistive element and a bypass device is disclosed. The discharging device is disposed between a first voltage bus and a second voltage bus. The resistive element is configured to activate the discharging device in response to a high-to-low electrostatic discharge (ESD) event during which the first voltage bus is high in potential relative to the second voltage bus. The bypass device is configured to bypass the resistive element and activate the discharging device in response to a low-to-high ESD event during which the second voltage bus is high in potential relative to the first voltage bus.


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