The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Oct. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Tung-Jiun Wu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 21/76898 (2013.01); H01L 23/3142 (2013.01); H01L 23/481 (2013.01); H01L 23/49805 (2013.01); H01L 23/49827 (2013.01); H01L 24/27 (2013.01);
Abstract

A semiconductor structure includes a first substrate including a die region and a scribe line region adjacent to the die region, a through substrate via disposed in the first substrate in the scribe line region, a first connecting structure disposed over the first substrate in the die region, a second connecting structure disposed over the first substrate in the scribe line region and coupled to the through substrate via, a first bonding structure disposed over the first substrate in the die region and coupled to the first connecting structure, and a second bonding structure disposed over the first substrate in the scribe line region and coupled to the second connecting structure. The through substrate via, the second connecting structure and the second bonding structure are physically and electrically separated from the first connecting structure and the first bonding structure.


Find Patent Forward Citations

Wu, Tung-Jiun. (2020). Semiconductor structure and method for forming the same (U.S. Patent No. 10879206). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10879206

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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