The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Apr. 20, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Xi-Zong Chen, Tainan, TW;
Chih-Hsuan Lin, Hsinchu, TW;
Cha-Hsin Chao, Taipei, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Li-Te Hsu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a recess in a layer. The recess has two opposite first inner walls and two opposite second inner walls, the first inner walls are spaced apart by a first distance, the second inner walls are spaced apart by a second distance, and the first distance is less than the second distance. The method includes depositing a first covering layer in the recess. The first covering layer covering the first inner walls is thinner than the first covering layer covering the second inner walls. The method includes removing the first covering layer over the first inner walls and a bottom surface of the recess.