The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Jul. 24, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Han-Wen Liao, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/33 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32697 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 22/10 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01L 21/76224 (2013.01);
Abstract
A method for manufacturing a semiconductor structure includes depositing a wafer in a processing chamber. Plasma is formed in the processing chamber to process the wafer. A plasma concentration over a peripheral region of the wafer is detected. A plasma distribution over the peripheral region of the wafer is adjusted according to the detected plasma concentration.