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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10878928 B1

PDFFull Text
Date of Patent:
Dec. 29, 2020

Filed:

May. 13, 2019

One-time-programmable (otp) implementation using magnetic junctions

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Harry-Hak-Lay Chuang, Zhubei, TW;

Tien-Wei Chiang, Taipei, TW;

Wen-Chun You, Dongshan Township, TW;

Yi-Chieh Chiu, Taipei, TW;

Yu-Lin Chen, Tainan, TW;

Jian-Cheng Huang, Hsinchu, TW;

Chang-Hung Chen, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Tri M Hoang

Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction. The broken-down state corresponds to a one-time programmed state and is not susceptible to high-temperature change, even at small sizes.

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