The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Dec. 19, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Hsinchu County, TW;

Hsien-Jung Chen, Tainan, TW;

Chien-Hung Liu, Hsinchu County, TW;

Chih-Wei Hung, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/0425 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 2216/04 (2013.01); H01L 27/11521 (2013.01);
Abstract

A method for programming a memory device is provided. The memory device includes first to fourth memory cells, in which the first and second memory cells share a first erase gate, and the third and fourth memory cells share a second erase gate. The method includes applying a first voltage to control gates of the first and third memory cell; applying a second voltage to control gates of the second and fourth memory cells, in which the first voltage is higher than the second voltage; applying a third voltage to a select gate of the first memory cell; and applying a fourth voltage to select gates of the second to fourth memory cell, in which the third voltage is higher than the fourth voltage.


Find Patent Forward Citations

Loading…