The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Sep. 17, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 11/419 (2006.01); G11C 5/06 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 5/06 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01);
Abstract
A charge sharing type lower-cell-voltage (LCV) write assist takes advantage of unused metal layers on top of a memory array to implement capacitance without incurring area costs. Only one-time fixed amount expenses of charge are needed for a given LCV level during the charge sharing phase of each write operation. Metal wires parallel to the bit cell power wires have good capacitance matching for charge sharing among all memory density configurations, thus benefitting memory compiler design.