The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Feb. 07, 2018
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Yong-Da Chiu, Kaohsiung, TW;
Shiu-Chih Wang, Kaohsiung, TW;
Shang-Kun Huang, Kaohsiung, TW;
Ying-Ta Chiu, Kaohsiung, TW;
Shin-Luh Tarng, Kaohsiung, TW;
Chih-Pin Hung, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC. KAOHSIUNG, TAIWAN, Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53233 (2013.01); H01L 23/49827 (2013.01); H01L 23/53238 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11825 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13541 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/16 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81895 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/14 (2013.01); H01L 2924/161 (2013.01); H05K 2201/03 (2013.01); H05K 2201/09481 (2013.01);
Abstract
A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.