The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Jun. 21, 2019
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventors:
Ryan M. Hatcher, Austin, TX (US);
Titash Rakshit, Austin, TX (US);
Jorge Kittl, Austin, TX (US);
Rwik Sengupta, Austin, TX (US);
Dharmendar Palle, Austin, TX (US);
Joon Goo Hong, Austin, TX (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 13/004 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01);
Abstract
A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, and a second FET and a second resistive memory element connected to a drain of the second FET. The drain of the first FET is connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET.