The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2020
Filed:
Feb. 16, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chung-Pin Chou, Hsinchu, TW;
Yu-Liang Tseng, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G06T 7/00 (2017.01); G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9503 (2013.01); G01N 21/8806 (2013.01); G06T 7/0004 (2013.01); G06T 2207/30148 (2013.01);
Abstract
A method includes generating a primary radiation beam from a radiation source; splitting the primary beam into a first radiation beam and a second radiation beam; directing the first radiation beam onto a front side of a wafer; directing the second radiation beam onto a back side of a wafer; generating an image of the front side of the wafer by receiving a reflection of the first radiation beam reflected from the wafer; and generating an image of the back side of the wafer by receiving a reflection of the second radiation beam reflected from the wafer.