The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 12, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Chang-Hung Chen, Hsinchu, TW;
Kuei-Hung Shen, Hsinchu, TW;
Wen-Chun You, Yilan County, TW;
Tien-Wei Chiang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A storage device includes: a plurality of first magnetic tunnel junction (MTJ) cells disposed on a first portion of a substrate; and a plurality of second MTJ cells disposed on a second portion different from the first portion of the substrate; wherein each of the plurality of first MTJ cells has a first cross-sectional surface area viewing from a top of the substrate, each of the plurality of second MTJ cells has a second cross-sectional surface area viewing from the top of the substrate, and the second cross-sectional surface area is greater than the first cross-sectional surface area.