The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Oct. 10, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0212 (2013.01); H01L 21/02118 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/823425 (2013.01); H01L 21/823468 (2013.01); H01L 29/4983 (2013.01); H01L 29/6653 (2013.01); H01L 29/78 (2013.01);
Abstract
A method includes forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer. A protection layer is formed to contact a top surface and a sidewall surface of the spacer layer. The horizontal portions of the protection layer are removed, wherein vertical portions of the protect layer remain after the removal. The spacer layer is etched to remove horizontal portions of the spacer layer, wherein vertical portions of the spacer layer remain to form parts of spacers.