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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10868128 B1

PDFFull Text
Date of Patent:
Dec. 15, 2020

Filed:

Feb. 01, 2019

Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same

Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Jen-Inn Chyi, Zhongli, TW;

Cheng-Han Tsou, Caotun Township, TW;

Szu-Hung Chen, Taoyuan, TW;

Assignees:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 29/207 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/28575 (2013.01); H01L 29/45 (2013.01); H01L 29/66477 (2013.01); H01L 29/66522 (2013.01); H01L 21/266 (2013.01); H01L 21/26546 (2013.01); H01L 21/31111 (2013.01); H01L 29/207 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract

Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).

Find Patent Forward Citations

Chyi, Jen-Inn. (2020). Ohmic contact structure, semiconductor device including an ohmic contact structure, and method for forming the same (U.S. Patent No. 10868128). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10868128

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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