The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Feb. 01, 2019
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 29/207 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/28575 (2013.01); H01L 29/45 (2013.01); H01L 29/66477 (2013.01); H01L 29/66522 (2013.01); H01L 21/266 (2013.01); H01L 21/26546 (2013.01); H01L 21/31111 (2013.01); H01L 29/207 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).