The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Apr. 20, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Chang-Sheng Tsao, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/10 (2006.01); H01L 31/04 (2014.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/26533 (2013.01); H01L 21/76224 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H01L 29/0649 (2013.01); H01L 31/04 (2013.01); H01L 31/10 (2013.01); Y02E 10/50 (2013.01);
Abstract

A semiconductor structure includes a substrate having a front surface and a back surface. The semiconductor structure further includes a first isolation structure extending from the front surface into the substrate, the first isolation structure having a depth Dfrom the front surface. The semiconductor structure further includes a second isolation structure extending from the front surface into the substrate, the second isolation structure having a depth Dfrom the front surface. The semiconductor structure further includes a first etching stop feature in the substrate and contacting the first isolation structure. The semiconductor structure further includes a second etching stop feature in the substrate and contacting the second isolation structure.


Find Patent Forward Citations

Loading…