The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jan. 29, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jang-Gn Yun, Hwaseong-si, KR;

Jae-Duk Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 29/08 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31144 (2013.01); H01L 21/76829 (2013.01); H01L 27/11565 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/40117 (2019.08); H01L 29/42352 (2013.01);
Abstract

A vertical memory device includes a substrate having a trench structure, gate electrodes on the substrate, the gate electrodes being spaced apart from each other in a first direction substantially vertical to an upper surface of the substrate, a channel including a vertical portion extending through the gate electrodes in the first direction, and a horizontal portion extending in the trench structure in a second direction substantially parallel to the upper surface of the substrate, the horizontal portion being connected the vertical portion, and an epitaxial layer on a first portion of the substrate and connected to the horizontal portion of the channel, the first portion of the substrate being adjacent to ends of the gate electrode in the second direction.


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