The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jan. 05, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Sheng Fen Chiu, Shanghai, CN;
Liang Chen, Shanghai, CN;
Chao Feng Zhou, Shanghai, CN;
Xiao Bo Li, Shanghai, CN;
Abstract
Flash memory devices and fabrication methods thereof are provided. An exemplary method includes providing discrete bit lines on a semiconductor substrate, a first dielectric layer on top surfaces of the bit lines, and a floating gate structure on the first dielectric layer, trenches being formed between adjacent bit lines and on the semiconductor substrate; forming a sacrificial layer with a top surface above the top surfaces of the bit lines in the trenches; forming a second dielectric layer on top and side surfaces of the floating gate structure and the top surface of the sacrificial layer; forming a control gate structure on the second dielectric layer; removing portions of the second dielectric layer, the floating gate structure and the first dielectric layer to expose a portion of the sacrificial layer; and removing the sacrificial layer from the adjacent bit lines and the semiconductor substrate, thereby forming air gaps.