The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Oct. 16, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventor:

Sheng-Fu Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H02H 9/046 (2013.01);
Abstract

The present disclosure relates to an integrated circuit. The integrated circuit comprises a silicon on insulator (SOI) device separated from a SOI substrate by an insulation layer. The SOI device comprises a power supply terminal, a ground terminal, a first I/O terminal and a second I/O terminal. An electrostatic discharge (ESD) protection circuit is integrated with the SOI device. The ESD protection circuit is configured to shunt current between two terminals of the SOI device during an ESD surge event. An electrostatic discharge (ESD) enhancement circuit is integrated with the SOI device. The ESD enhancement circuit is configured to clamping the SOI substrate to a lower potential of the two terminals of the SOI device.


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