The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jun. 01, 2018
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Chun-Ti Lu, Kaohsiung, TW;
Meng-Chin Lee, Tainan, TW;
Fang-Liang Lu, New Taipei, TW;
Chee-Wee Liu, Taipei, TW;
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/268 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/67 (2006.01); B23K 26/352 (2014.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3242 (2013.01); B23K 26/352 (2015.10); H01L 21/268 (2013.01); H01L 21/67115 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66803 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.