The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Aug. 02, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Shao-Lun Chien, Hsinchu, TW;
Ting-Wei Chiang, New Taipei, TW;
Li-Chun Tien, Tainan, TW;
Pin-Dai Sue, Tainan, TW;
Ting Yu Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A transmission gate structure includes first and second PMOS transistors in a first active area and first and second NMOS transistors in a second active area. The first and second PMOS transistors include first and second gate structure, the first NMOS transistor includes a third gate structure coupled to the second gate structure, and the second NMOS transistor includes a fourth gate structure coupled to the first gate structure. A first metal zero segment overlies the first active area, a second metal zero segment is offset from the first metal zero segment by an offset distance, a third metal zero segment is offset from the second metal zero segment by the offset distance, and a fourth metal zero segment is offset from the third metal zero segment by the offset distance and overlies the second active area.