The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Sep. 25, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chin-Min Huang, Taichung, TW;

Ching-Hung Lai, Taipei, TW;

Jia-Guei Jou, New Taipei, TW;

Yin-Chuan Chen, Taichung, TW;

Chi-Ming Tsai, Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2012.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method for forming a photomask is provided. The method includes: receiving an initial layout including a plurality of first patterns and a plurality of second patterns; decomposing the initial layout into a first layout including the plurality of first patterns and a second layout including the plurality of second patterns; inserting a plurality of third patterns into the first layout, wherein each of the plurality of third patterns is adjacent to at least one of the plurality of first patterns; comparing the first layout and the second layout; identifying a fourth pattern as an overlapping portion of the plurality of third patterns overlapping one of the plurality of second patterns; increasing a width of the fourth pattern; and outputting the first layout including the first patterns, the third patterns and the fourth patterns into a first photomask.


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