The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jul. 10, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shang-Chih Hsieh, Yangmei, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Ting-Wei Chiang, New Taipei, TW;

Chun-Fu Chen, Chiayi, TW;

Hsiang-Jen Tseng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/39 (2020.01); H03K 19/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G06F 30/39 (2020.01); H03K 19/02 (2013.01); H01L 27/0207 (2013.01);
Abstract

An integrated circuit designing system includes a non-transitory storage medium encoded with a first set of standard cell layouts and a second set of standard cell layouts both being configured to perform a predetermined function. The predetermined manufacturing process having a nominal minimum pitch (T) of metal lines. Each standard cell layout of the first set of standard cell layouts and the second set of standard cell layouts having a cell height (H) wherein the cell height is a non-integral multiple of the nominal minimum pitch. A hardware processor communicatively is coupled with the non-transitory storage medium and is configured to execute a set of instructions for generating an integrated circuit layout based on the first set of standard cell layouts, the second set of standard cell layouts and the nominal minimum pitch; and creating a data file corresponding to the integrated circuit layout.


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