The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Mar. 01, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yu Chao Lin, Hsinchu, TW;

Jui-Ming Chen, Zhunan Township, TW;

Shao-Ming Yu, Zhubei, TW;

Tung Ying Lee, Hsinchu, TW;

Yu-Sheng Chen, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1293 (2013.01); H01L 27/2436 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip including a phase change material disposed over a bottom electrode and configured to change from a crystalline structure to an amorphous structure upon temperature changes. A top electrode is disposed over an upper surface of the phase change material. A via electrically contacts a top surface of the top electrode. Further, a maximum width of the upper surface of the phase change material is less than a maximum width of a bottom surface of the phase change material.


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