The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Nov. 08, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Aryan Afzalian, Chastre, BE;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a source region in a semiconductor substrate, in which the source region has a first type dopant. A channel region is formed in the semiconductor substrate and next to the source region. A drain region is formed in the semiconductor substrate, in which the drain region has a second type dopant different from the first type dopant. A heavily doped region is formed between the source region and the channel region, in which the heavily doped region has the first type dopant, and a dopant concentration of the first type dopant in the heavily doped region is higher than a dopant concentration of the first type dopant in the source region. A gate structure is formed over the channel region. A first low-k spacer is formed extending downwardly along a first sidewall of the gate structure to a top surface of the heavily doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile