The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
May. 21, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Cheng Ho, Hsinchu, TW;
Hui-Ting Lu, Zhudong Township, TW;
Pei-Lun Wang, Zhubei, TW;
Yu-Chang Jong, Hsinchu, TW;
Jyun-Guan Jhou, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a field plate disposed over a drift region. A first gate electrode overlies a substrate between a source region and a drain region. An etch stop layer laterally extends from an outer sidewall of the first gate electrode to the drain region. The etch stop layer overlies the drift region disposed between the source region and the drain region. A field plate is disposed within a first inter-level dielectric (ILD) layer overlying the substrate. The field plate overlies the drift region. A top surface of the field plate is aligned with a top surface of the first gate electrode and a bottom surface of the field plate is vertically above a bottom surface of the first gate electrode. The field plate and first gate electrode respectively include metal materials.