The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Oct. 18, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kai-Fung Chang, Taipei, TW;
Lien-Yao Tsai, Hsinchu, TW;
Baohua Niu, Hsinchu, TW;
Yi-Chuan Teng, Zhubei, TW;
Chi-Yuan Shih, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01G 4/06 (2006.01); H01L 41/047 (2006.01); B81B 3/00 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); B81B 3/0021 (2013.01); B81B 3/0086 (2013.01); B81B 7/02 (2013.01); B81C 1/00134 (2013.01); H01G 4/06 (2013.01); H01L 41/047 (2013.01); B81B 2207/99 (2013.01);
Abstract
An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.