The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2020

Filed:

Jun. 19, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yoshikazu Nagamura, Ibaraki, JP;

Takashi Ipposhi, Ibaraki, JP;

Katsumi Eikyu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/32139 (2013.01); H01L 21/76837 (2013.01); H01L 23/53295 (2013.01);
Abstract

The semiconductor device has a wiring M, an interlayer insulating film ILformed on the wiring M, and two wirings Mformed on the interlayer insulating film IL, and the wiring Mis connected to the wiring Mby a conductor layer PGformed in the interlayer insulating film IL. A recess CCis formed on the upper surface ILof the interlayer insulating film IL, and the recess CCis defined by a side surface Sconnected to the upper surface ILand a side surface Sconnected to the side surface S, and the side surface Sis inclined so that the width WCof the recess CCdecreases in the direction from the upper surface ILof the interlayer insulating film ILtoward the upper surface ILof the interlayer insulating film IL


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