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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10861733 B1

PDFFull Text
Date of Patent:
Dec. 08, 2020

Filed:

Jul. 31, 2017

Manufacturing method of semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Masakatsu Ohno, Utsunomiya, JP;

Seiji Yasumoto, Tochigi, JP;

Naoki Ikezawa, Tochigi, JP;

Satoru Idojiri, Tochigi, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Bryan R Junge

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 21/48 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/481 (2013.01); H01L 21/7806 (2013.01); H01L 27/1218 (2013.01); H01L 27/1266 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133553 (2013.01); G02F 2201/123 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1274 (2013.01); H01L 27/3262 (2013.01); H01L 29/78648 (2013.01); H01L 51/0097 (2013.01); H01L 51/56 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2221/68386 (2013.01); H01L 2251/5338 (2013.01);
Abstract

The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.

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