The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Oct. 12, 2018
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Tasuku Koyanagi, Tokyo, JP;

Hiroki Takeuchi, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01S 5/30 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/3013 (2013.01);
Abstract

A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.


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