The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jan. 08, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jia-Ming Lin, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
Chun-Che Lin, Tainan, TW;
Ying-Lang Wang, Taichung, TW;
Wei-Ken Lin, Tainan, TW;
Chuan-Pu Liu, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 21/314 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/022 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/02326 (2013.01); H01L 21/02337 (2013.01); H01L 21/3065 (2013.01); H01L 21/31051 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/785 (2013.01);
Abstract
A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.