The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Nov. 13, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chewn-Pu Jou, Hsinchu, TW;
Chih-Hsin Ko, Fongshan, TW;
Po-Wen Chiu, Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Chun-Chieh Lu, Taipei, TW;
Chi-Feng Huang, Zhubei, TW;
Huan-Neng Chen, Taichung, TW;
Fu-Lung Hsueh, Kaohsiung, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01G 4/008 (2006.01); H01G 4/005 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01G 4/005 (2013.01); H01G 4/008 (2013.01); H01L 23/5223 (2013.01); H01L 23/5283 (2013.01); H01L 23/53276 (2013.01); C01B 2204/04 (2013.01); C01B 2204/32 (2013.01); H01L 21/76852 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first graphene structure. The capacitor further includes a second graphene structure over the dielectric layer, wherein the second graphene structure has a second plurality of graphene layers.