The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

May. 02, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Wenyu Hua, Wuhan, CN;

Fandong Liu, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

Embodiments of a three-dimensional (3D) memory device are provided. The 3D memory device includes a substrate, a memory stack with interleaved conductive layers and dielectric layers over the substrate, an array of channel structures each extending vertically through the memory stack, and a plurality of contact hole structures each extending vertically through the memory stack and electrically connected to a common source of one or more of the channel structures. At least one of the plurality of contact hole structures is surrounded by a plurality of the channel structures of nominally equal lateral distances to the respective contact hole structure.


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