The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jan. 07, 2019
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Chii-Horng Li, Zhubei, TW;
Chien-I Kuo, Chiaya County, TW;
Lilly Su, ChuBei, TW;
Chien-Chang Su, Kaohsiung, TW;
Ying-Wei Li, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, at least one first isolation structure, at least one second isolation structure, a source structure, a drain structure and a plurality of semiconductor fins. The first isolation structure and the second isolation structure are located on the semiconductor substrate. The source structure is located on the semiconductor substrate and the first isolation structure, in which at least one first gap is located between the source structure and the first isolation structure. The drain structure is located on the semiconductor substrate and the second isolation structure, in which at least one second gap is located between the drain structure and the second isolation structure. The semiconductor fins protrude from the semiconductor substrate, in which the semiconductor fins are spaced apart from each other, and connect the source structure and the drain structure.